Method of manufacturing a schottky gate field effect transistor.

摘要

A method for fabricating a semiconductor device having a T-shaped gate electrode on a two-stepped recess includes the steps of forming an active layer in a substrate surface, forming two ohmic electrodes on the active layer, forming first side wall films on both side walls of the two ohmic electrodes, forming an upper stepped recess by etching the active layer using the first side wall films as a mask, forming second side wall films in the upper stepped recess to be in contact with the first side wall films, forming a lower stepped recess by etching the active layer exposed to the surface of the upper stepped recess using the second side wall films as a mask, and forming a T-shaped gate in the lower stepped recess with its shoulder parts on the second side wall films.