发明名称 |
Control of particle generation within a reaction chamber |
摘要 |
An RF signal is rapidly brought to a high power level prior to the introduction of a wafer into the reaction chamber to initiate a plasma that agitates and circulates any particles within the reaction chamber, thereby allowing effective reaction chamber cleaning; and an RF signal is slowly brought to a high power level to initiate a plasma prior to or during wafer processing to avoid disturbing and circulating such particles during wafer processing, thereby preventing particle induced contamination. A magnetic field may be applied to the reaction chamber to move particles from a plasma sheath/glow region interface to a reaction chamber exhaust line, and thereby prevent such particles from falling onto a processed wafer.
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申请公布号 |
US5456796(A) |
申请公布日期 |
1995.10.10 |
申请号 |
US19930071288 |
申请日期 |
1993.06.02 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
GUPTA, ANAND;YE, YAN;LANUCHA, JOSEPH |
分类号 |
C23C16/50;C23C16/44;H01J37/32;H01L21/205;H01L21/302;H01L21/3065;(IPC1-7):H05H1/00 |
主分类号 |
C23C16/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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