发明名称 |
MOSFET with temperature protection |
摘要 |
A MOSFET protection circuit includes a switch element which is thermally coupled to the MOSFET and switches the MOSFET off by establishing a connection between the gate and source electrodes thereof when a critical temperature is reached. The switch element also generates a temperature-dependent signal which controls a voltage reducing element connected between the gate and source electrodes of the MOSFET. The voltage reducing element is activated at a temperature which is lower than the critical temperature so that the gate-source voltage of the MOSFET and the current flowing therethrough is reduced as a result at the second temperature. The temperature rise is thereby slowed.
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申请公布号 |
US5457419(A) |
申请公布日期 |
1995.10.10 |
申请号 |
US19940192820 |
申请日期 |
1994.02.07 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
TIHANYI, JENOE |
分类号 |
H03K17/08;H01L27/02;H03K17/0812;H03K17/14;(IPC1-7):H03K17/14 |
主分类号 |
H03K17/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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