发明名称 MOSFET with temperature protection
摘要 A MOSFET protection circuit includes a switch element which is thermally coupled to the MOSFET and switches the MOSFET off by establishing a connection between the gate and source electrodes thereof when a critical temperature is reached. The switch element also generates a temperature-dependent signal which controls a voltage reducing element connected between the gate and source electrodes of the MOSFET. The voltage reducing element is activated at a temperature which is lower than the critical temperature so that the gate-source voltage of the MOSFET and the current flowing therethrough is reduced as a result at the second temperature. The temperature rise is thereby slowed.
申请公布号 US5457419(A) 申请公布日期 1995.10.10
申请号 US19940192820 申请日期 1994.02.07
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 TIHANYI, JENOE
分类号 H03K17/08;H01L27/02;H03K17/0812;H03K17/14;(IPC1-7):H03K17/14 主分类号 H03K17/08
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