Illuminating device resolution measuring photomask for semiconductor process

摘要

The photomask includes two concentric patterns symmetrical to its centre axis. The two patterns are mutually aligned so that the intermediate spaces between their opposite, mutually corresp. sub-patterns become sequentially wider or narrower. Pref. the sub-patterns are of identical width, e.g. 5 to 15 microns. The concentric patterns may be interconnected by coupling film sections in the intermediate space between the patterns. The concentric patterns may be in the form of a square, a circle, an angle, or a bracket. Each two of adjacent, concentric patterns may have the same line width.