Senkrechte Anisotropie in Dünnfilmvorrichtungen.

摘要

One aspect of the present invention relates to enabling rotational flux conduction through magnetic film devices by creating a magnetic film layer with anisotropy perpendicular to the plane of the film layer, the film deposited in sufficient thickness so that there is a rest state rotational conduction path in the plane of the film layer. Another aspect of the invention is to provide for flux spreading in a magnetic device having perpendicular anisotropy. One feature of the present invention enables forming perpendicularly oriented central domains in a magnetic device so that the path for conduction of signal flux by rotation remains open even for very narrow signal flux paths. Another feature of the invention is to orient at rest domain states of a magnetic device pole (or poles) perpendicular to two desired in-plane rotational flux travel directions. Another feature of the invention is to orient edge domains in this type of magnetic device into a plane where their relative widths do not impact substantially on rotational flux flow through the device for narrow track heads. A preferred embodiment of the present invention includes at least one pole of a magnetic device, formed on a substrate, having a preferred at rest pole domain orientation perpendicular to the substrate plane.