Semiconductor component field oxide layer formation method

摘要

The method involves forming link oxide layer (2) and oxide resistance layer (3) on a substrate (1). One field region is opened by etching a section of the oxide resistance layer, with a part of the link oxide layer remaining. Then the link oxide layer is converted onto a nitrogen oxide layer (2'). Two further oxide resistance layers (6,7) are sequentially deposited on the resulting structure. A spacing layer is formed by anisotropic etching at the latter of the oxide resistance layers. A section of the substrate is exposed by etching the intermediate oxidation resistance and the link oxidation layers converted into nitride layer. The field oxide layer is formed by oxidation of the substrate.