Semiconductor wafer process chamber with susceptor back coating.

摘要

The present disclosure is directed to an apparatus for depositing a layer of a material on a wafer. The apparatus includes a deposition chamber (12) having an upper dome (14), a lower dome (16) and a side wall (18) between the upper and lower domes. A susceptor (20) is in and extends across the deposition chamber (12) to divide the deposition chamber (12) into an upper portion (22) above the susceptor (20) and a lower portion (24) below) the susceptor (20). A gas inlet manifold (30) is in the side wall (18). The manifold (30) has three inlet ports (50, 52, 54). One of the ports (52) is connected by passages (104) which open into the lower portion (24) of the deposition chamber (12). The other two ports (50, 54) are connected by passages (108, 112) which open into the upper portion (22) of the deposition chamber (12). A gas supply system is connected to the inlet ports (50, 52, 54) so as to provide the same gases into the lower portion (24) of the deposition chamber (12) as well as into the upper portion (22) of the deposition chamber (12). This allows the back surface of the susceptor (20) to be coated with a layer of the same material as to be coated on the wafer prior to coating the layer on the wafer. <IMAGE>