Manufacturing process for obtaining bipolar transistors with controlled storage time.

摘要

A manufacturing process for obtaining integrated structure bipolar transistors with controlled storage time comprises the steps of: in a silicon material (1, 2), forming at least one bipolar transistor occupying a first area (AD) on a first surface of the silicon material (1, 2); covering the first surface of the silicon material (1, 2) with an insulating material layer (5); selectively removing the insulating material layer (5) to open at least one window (6) having a second area (APt) much smaller than the first area (AD) occupied by the bipolar transistor; implanting into the silicon material (1, 2) a medium dose (D) of platinum ions through said window (6); and diffusing into the silicon material (1, 2) the implanted platinum ions to obtain a uniform distribution of platinum inside the transistor.