| 摘要 |
<p>The circuit comprises thin film elements and electrical interconnections on an insulating substrate (11). The interconnections comprise a metal multilayer of, in sequence from the substrate, Ti (21), Pd or Pd-Ti alloy (22), Cu (23), Ni (24), a Cu barrier layer (25), and Au (26). A thin barrier layer of copper is interposed between the Au layer and the Ni layer, and the layer is of thickness sufficient to restrict diffusion of Ni through the Au layer. Also claimed is a composite electrical interconnection for use in circuits as above.</p> |
