| 摘要 |
PURPOSE:To manufacture a thin film transistor of uniform characteristics by suppressing off-current variation caused by offset length variation. CONSTITUTION:A polycrystalline Si film 31 is formed in the area where a groove 44 is formed in the base material, and from the polycrystalline Si film 31, the groove 44 is filled with an SiO<2> film 45, and then with a photoresist 46 and the SiO2 film 45 on a channel area 32 used as masks, a drain area 34 is formed on the polycrystalline Si film 31. So, even if dislocation occurs with the photoresist 46, an offset area 36 between a channel area 32 and a drain area 34 is formed in self-alignment manner. |
