X-RAY MASK STRUCTURE, ITS MANUFACTURE, X-RAY EXPOSURE METHOD USING THE X-RAY MASK STRUCTURE, SEMICONDUCTOR DEVICE PRODUCED BY USING X-RAY ALIGNER AND THE MASK AND ITS MANUFACTURE

摘要

PURPOSE:To obtain an x-ray mask structure having a high, stable positional accuracy with time in temperatures and humidity by joining with a holding frame through a ceramic oxide film forming a reinforcing member without developing strain when an external force is applied. CONSTITUTION:Sintered SiC is used for a reinforcing member 14. Heat treatment is given to the reinforcing member 14 within air atmosphere, and an SiC oxide film 15 is formed as an SiC oxide on the surface. This oxide and several mum of the surface mainly comprise SiO2. An Si substrate 11 to be finally used as a holding frame is superimposed on the reinforcing member 14, on which an oxide film 15 is formed, and both of them are joined together by heat treatment under pressure. An SiN is formed on the Si substrate 11 with CVD, only an X-ray transmission region 16 of the Si substrate 11 is back etched using the reinforcing member 14 as a protective film, in succession, a W as an X-ray absorbing body 13 is formed by a sputtering apparatus, a desired pattern is formed by an EB lithography device, etching with SF6 gas is performed and the X-ray absorbing body pattern 13 is formed.