发明名称 HERMETIC PACKAGE FOR HIGH-VOLTAGE SEMICONDUCTOR DEVICE
摘要 PURPOSE: To make a package compact and to increase heat conduction by hermetically sealing a semiconductor device into the package and electrically bringing the semiconductor device into contact through a pin and a lid, while cooling the semiconductor device through the lid and a base. CONSTITUTION: This semiconductor device 10 hermetically sealed into the package has a metallic contact region 26 in the upward surface 28 of a plate substrate having electrical contact regions 22 in a downward surface 24. Sections 30 are extended downwards and flat edge sections 34 are formed so that a flat internal section 32 is brought into contact with the contact region 26, when a lid 14 consisting of an electric conduction metal is bonded with a base 16 in the lid 14. A thermal conduction material having electrical insulating properties is used as the base 16, and a plurality of openings 36 to each of the contact regions 22 of the semiconductor device 10 are penetrated to the base 16 and hermetically sealed with a flat electrical conduction foil 38 combined with a top face 40. Contact pins 42 installed into the openings 36 are crossed over the underside 44 of the base 16 and extended to the outside in electrical contacts to the foil 38, and mounted with solder 46 under the state of the contacts of the foil 38.
申请公布号 JPH07254663(A) 申请公布日期 1995.10.03
申请号 JP19950000760 申请日期 1995.01.06
申请人 HARRIS CORP 发明人 BUIKUTAA EI KEI TENPURU;HOOMAA EICHI GURASUKOTSUKU SEKANDO
分类号 H01L23/13;H01L21/50;H01L23/02;H01L23/04;H01L23/049;H01L23/055;(IPC1-7):H01L23/13 主分类号 H01L23/13
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