发明名称 |
METHOD FOR FORMING CRYSTALLINE DEPOSITED FILM |
摘要 |
A method for forming a crystalline deposited film comprises introducing a gaseous starting material for formation of deposited film and a gaseous halogenic oxidizing agent having the property of oxidative action on said starting material into a film forming space in which a substrate having a free surface with a non-nucleation surface (SNDS) with smaller nucleation density and a nucleation surface (SNDL) having sufficiently small area for crystal growth from only a single nucleus and having greater nucleation density (NDL) than the nucleation density (NDS) of said non-nucleation surface (SNDS) being arranged adjacent thereto is previously arranged, thereby effecting contact between said materials to form a plurality of precursors containing precursors under excited state, forming a single crystal on said nucleation surface (SNDL) with at least one precursor of these precursors being as the source for feeding the constitutent element of the deposited film and permitting a single crystal to grow from said nucleus. |
申请公布号 |
CA1337170(C) |
申请公布日期 |
1995.10.03 |
申请号 |
CA19870533330 |
申请日期 |
1987.03.30 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
MATSUYAMA, JINSHO;HIRAI, YUTAKA;UEKI, MASAO;SAKAI, AKIRA |
分类号 |
C23C16/04;C23C16/24;C23C16/44;C30B25/18;H01L21/20;H01L21/205;(IPC1-7):H01L21/20;C30B25/04 |
主分类号 |
C23C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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