| 摘要 |
PURPOSE:To provide the method of manufacturing a semiconductor light emitting device which can obtain sufficient luminous intensity in practice by the doping of rare earth elements. CONSTITUTION:A porous silicon layer 2 is formed on a single crystal silicon substrate 1 by the anodic formation of the surface, and doped with high concentration Er ions, by an electrolytic doping method wherein the substrate is dipped in Er salt solution and a voltage is applied so as to make the substrate negative and make a counter electrode positive. By lamp-annealing, a molten layer 21 for confining Er with which at least the surface part is doped is formed, and at the same time, a light emitting layer 22 wherein Er is activated is formed. |
