发明名称 |
Process for fabricating a substrate with thin film capacitor and insulating plug |
摘要 |
A thin-film bypass capacitor is fabricated by forming a plurality of through holes through the thickness of a nonconductive base substrate and filling the through holes with a conductive material to form ground vias and power vias. A sequence of back side metalization layers are applied to the back side surface of the base substrate. A sequence of bottom contact layers are applied to the front side surface of the base substrate. A bottom contact power terminal is formed in the bottom contact layer and is electrically isolated from remaining portions of the bottom contact layers by insulating plugs. A bottom contact metalization layer is applied to the surface of the bottom contact layers and the insulating plugs. A dielectric layer is formed on the surface of the bottom contact metalization layer. A ground metalization via and a power metalization via are formed at the surface of the dielectric layer. A sequence of top contact layers are applied to the surface of the dielectric layer and a front side ground terminal and front side power terminal are formed. A back side ground terminal and a back side power terminal are formed at the back side of the base substrate.
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申请公布号 |
US5455064(A) |
申请公布日期 |
1995.10.03 |
申请号 |
US19930151409 |
申请日期 |
1993.11.12 |
申请人 |
FUJITSU LIMITED |
发明人 |
CHOU, WILLIAM T.;PETERS, MICHAEL G.;WANG, WEN-CHOU V.;WHEELER, RICHARD L. |
分类号 |
H01G4/33;H01L21/822;H01L23/12;H01L23/50;H01L23/538;H01L23/64;H01L27/04;H05K1/11;H05K1/16;H05K3/46;(IPC1-7):B05D5/12 |
主分类号 |
H01G4/33 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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