发明名称 |
Method to reduce emitter-base leakage current in bipolar transistors |
摘要 |
Generally, and in one form of the invention, a method is disclosed for reducing base-to-emitter leakage in a bipolar transistor having an active region 22 bounded by an isolation implant boundary 24, said method comprising arranging an emitter contact 26 and a base contact 36 such that at a crossing of the contacts over the implant boundary, a leakage current between the contacts along the boundary is limited by a necessity to transit the thickness of a layer of material, and whereby said transistor exhibits improved gain, noise performance, and reliability.
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申请公布号 |
US5455440(A) |
申请公布日期 |
1995.10.03 |
申请号 |
US19940245712 |
申请日期 |
1994.05.17 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HENDERSON, TIMOTHY S.;FAN, SHOU-KONG;LIU, WILLIAM U. |
分类号 |
H01L21/331;H01L29/737;(IPC1-7):H01L21/822 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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