发明名称 |
Gate electrode for MNOS semiconductor memory device |
摘要 |
Optimized switching and retention characteristics of an MNOS memory device are obtained by using as a gate electrode material either metals or semi-metals having a high work function, in conjunction with a gate dielectric layer having a low density of trapping states throughout its volume. The preferred gate electrode materials are either titanium or p+-doped polycrystalline silicon.
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申请公布号 |
US4151537(A) |
申请公布日期 |
1979.04.24 |
申请号 |
US19770822010 |
申请日期 |
1977.08.05 |
申请人 |
GTE LABORATORIES INC |
发明人 |
GOLDMAN, ERNEST A;WASSERMAN, MOE S |
分类号 |
H01L29/49;H01L29/792;(IPC1-7):H01L29/78 |
主分类号 |
H01L29/49 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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