| 摘要 |
PURPOSE:To increase luminous intensity and improve luminance by forming a side surface electrode and changing the flow of a current. CONSTITUTION:A center electrode 6 of ohmic contact is formed in the central part of a surface on the light emitting side of a chip element having a P-N junction. A side surface electrode 7 and a back surface electrode 8 are formed in a unified body. The side surface electrode 7 is formed by mesa-etching and eliminating the corner part 12 of the back surface. The side surface electrode 7 is in ohmic contact with the element side surface 5. The back surface electrode 8 is in non-ohmic contact with the element back surface by forming a PSG film between them. |
