| 发明名称 |
RESIST COMPOSITION AND PATTERN FORMING METHOD |
| 摘要 |
PURPOSE:To obtain a positive chemical amplifying resist compsn. which has resistance against plasma and can be exposed with excimer laser light. CONSTITUTION:This resist compsn. contains a resin expressed by formula and a photoacid producing agent. In formula, one of R<2> and R<3> is a Si-contg. alkyl group and the other is a group containing such a group that is released with acid. |
| 申请公布号 |
JPH07253673(A) |
申请公布日期 |
1995.10.03 |
| 申请号 |
JP19940044014 |
申请日期 |
1994.03.15 |
| 申请人 |
FUJITSU LTD |
发明人 |
KODACHI AKIKO;TAKECHI SATOSHI |
| 分类号 |
G03F7/004;C08K5/42;C08L25/00;C08L25/18;C08L33/24;C08L35/02;C08L43/04;C08L47/00;G03F7/038;G03F7/075;H01L21/027;(IPC1-7):G03F7/075 |
主分类号 |
G03F7/004 |
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