| 摘要 |
PURPOSE:To provide a mask for exposure capable of improving the resolving power for isolated patterns and depth of focus to an equal level as the periodic patterns in a Levenson type phase shift method and improving the accuracy of pattern exposure. CONSTITUTION:This mask for exposure formed with desired mask patterns on a light transmissive substrate 101 has a first film 104 which is so formed as to have opening patterns on this light transmissive substrate 101 and has light shieldability to both of a first exposing wavelength lambda1 and a second exposing wavelength lambda2 and a second film 103 which is formed selectively in the opening patterns of the first film 104, has light transmissivity at the first exposing wavelength lambda1, imparts a phase difference of 180 deg. to the transmitted light and has light shieldability at the second exposing wavelength lambda2. |
