| 摘要 |
PURPOSE: To increase the open-circuit voltage of a photoelectric device by adding hydrogen at a rate higher than an intrinsic conductive type second region in an intrinsic conductive type first region and making the thickness of the first region smaller than that of the second region. CONSTITUTION: A second layer 23 of semiconductor materials formed between a first layer 22, through which incident light on a photoelectric device 10 is transmitted and which has a wide band-gap energy of a first conductivity type semiconductor material, and the third layer 30 of the semiconductor material having a conductivity type opposite to that of the first layer 22 has an intrinsic conductivity type first region 24 nearest the first layer 22 and an intrinsic conductive type second region 28 separated from the first layer 22. The band-gap energy of the first region 24 is made larger than that of the second region 28, but it is not made larger than the band gap energy of the first layer 22. The first and second regions consist of hydrogenated amorphous silicon, the first region 24 contains hydrogen at a rate higher than the second region 28, and the thickness of the first region 24 is approximately half that of the second region 28. |
