| 摘要 |
A method for forming a resist pattern using a double-layer resist. A substrate is prepared and then, a novolak i-line photoresist layer not photosensitive to a g-line but photosensitive to an i-line is formed on this substrate as a lower layer resist, by solving the novolak i-line photoresist in a first solvent. A novolak g-line photoresist layer photosensitive to the g-line in which a compound absorbing i-line is mixed is formed on this novolak i-line photoresist layer as an upper layer resist, by solving the novolak g-line photoresist in a second solvent to which is added a poor solvent in which the novolak i-line photoresist is substantially insoluble. Then, the upper layer resist is irradiated with the g-line using a mask and a pattern of this upper layer resist is formed by development. Thereafter, the whole surface of the substrate is irradiated with the i-line using this upper layer resist pattern as a mask to pattern the lower layer resist. Since the thus formed double-layer resist pattern uses the novolak photoresist as a lower layer resist, its dry etching resistance is large. In addition, since the novolak photoresist is used as a lower layer resist, exposure time of the lower layer resist can be shortened and the throughput is improved.
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