| 摘要 |
PURPOSE:To obtain a semiconductor storage device, in which the consumption of stepped-up potential is reduced. CONSTITUTION:Word lines, to which a memory cell is connected, a word-line selector circuit containing a word-line driver circuit and a word-line noise killer circuit, and a word-line driving signal conductor selector circuit 39a comprising a word-line driving signal conductor driver circuit 43a driving the word-line driver circuit and a killer driver circuit 47a driving the word-line noise killer circuit are provided. The word-line driving signal conductor driver circuit 43a is operated by potential difference between stepped-up potential VPP and low potential VSS, and the killer driver circuit 47a is operated by potential difference between high potential VCC in place of stepped-up potential VPP and low potential VSS. |
