| 摘要 |
<p>PURPOSE:To enable constituting an inversion polarization structure for phase matching which is easy for manufacturing, regarding an optical parametric semiconductor element. CONSTITUTION:The optical semiconductor element is provided with a laminated semiconductor 1 in which a first intrinsic semiconductor layer 1a, an N-type semiconductor layer 1b, a second intrinsic semiconductor layer 1c and a P-type semiconductor layer ld are repeatedly laminated in order. A first depletion layer 2a containing the first intrinsic semiconductor layer 1a and a second depletion layer 2b containing the second intrinsic semiconductor layer 1c are formed. The distance (d) between the nearest depletion layer 2b and depletion layer 2a is set as d=(lambda4).costheta/(nAP-nAS where TRAP is the average refractive index to excited light generated between the two deplation layers, nAS is the average refractive index to a signal light generated between the two deplation layers, and theta is the angle which the excited light and the signal light propagating in the laminated semiconductor 1 form with the normal of the lamination surface of the laminated semiconductor 1.</p> |
