Photovoltaic device having a semiconductor grade silicon layer formed on a metallurgical grade substrate

摘要

The disclosure relates to a semiconductor device comprising silicon having a substrate composed of low grade silicon, a silicon layer whose silicon purity is higher than that of the low grade silicon formed on the substrate and an electrode formed on the silicon layer. In the device, the low grade silicon may be selected from metallurgical grade silicon and silicon whose purity is less than 99.99%, and the silicon layer may be over 99.999% purity or semiconductor grade.