Verfahren zur Herstellung eines Halbleiterbauelements, Verfahren zur Reinigung einer Kristalloberfläche eines Halbleiters sowie Halbleiterbauelement

摘要

A semiconductor device such as a heterojunction bipolar transistor or buried-ridge type semiconductor laser is formed from a sample comprising GaAs substrate 1, AlGaAs layer 2 with GaAs cap 3 wherein an oxide layer 6 is removed by low temperature (below 450 DEG C) treatment with a halogen gas (HC1, with hydrogen and AsH3) by an absorption/desorption reaction. Conventional dry etching using HC1 at 750 DEG C, and then crystal regrowth 4 of the GaAs layer by MOCVD are then conducted in the same chamber. The invention provides a clean regrowth interface 5.