发明名称 |
METHOD OF REWORKING MULTI LEVEL RESIST |
摘要 |
The method comprises the steps of forming a bottom resist, a middle resist, and an upper resist in a substrate; checking the upper resist with electric beam; eliminating a bad patterned upper resist; processing the surface of the middle resist with oxide plasma; and exposing the upper resist.
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申请公布号 |
KR950011174(B1) |
申请公布日期 |
1995.09.28 |
申请号 |
KR19920024911 |
申请日期 |
1992.12.21 |
申请人 |
LG SEMICONDUCTOR CO., LTD. |
发明人 |
CHONG, JAE - KUN |
分类号 |
G03F7/36;(IPC1-7):G03F7/36 |
主分类号 |
G03F7/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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