发明名称 METHOD OF REWORKING MULTI LEVEL RESIST
摘要 The method comprises the steps of forming a bottom resist, a middle resist, and an upper resist in a substrate; checking the upper resist with electric beam; eliminating a bad patterned upper resist; processing the surface of the middle resist with oxide plasma; and exposing the upper resist.
申请公布号 KR950011174(B1) 申请公布日期 1995.09.28
申请号 KR19920024911 申请日期 1992.12.21
申请人 LG SEMICONDUCTOR CO., LTD. 发明人 CHONG, JAE - KUN
分类号 G03F7/36;(IPC1-7):G03F7/36 主分类号 G03F7/36
代理机构 代理人
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