发明名称 THIN FILM ELECTRONIC DEVICES AND MANUFACTURING METHOD
摘要 <p>Patterns or circuits of semiconductors or metals are produced with dimensions at least as small as 7 nm using nanocrystalline precursors. The substrate (1) is masked with an electron beam sensitive layer (2) and a pattern (3) is traced using a focused electron beam. Exposure to a source of nanocrystalline material (4) and dissolution of the mask material (5) produces patterned features of nanocrystals. The sample may then be heated to form a bulk thin film (6) or left unheated, preserving the electronic properties of the isolated particles. The process is repeatable with different materials to build laminar structures of metals, semiconductors and insulators.</p>
申请公布号 WO1995026042(A1) 申请公布日期 1995.09.28
申请号 US1995003406 申请日期 1995.03.20
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