发明名称 Additional plasma cathode sputtering method for production of thin films
摘要 The additional plasma cathode sputtering method for production of thin films is characterised by the following facts: (a) the deposit is produced by the plasma of one or several cathodes; (b) at the same time, an additional plasma is produced at or in front of each substrate in such a way that, independently of the deposition rate, energy-adjustable bombardment of each substrate with particles is possible.
申请公布号 DE4409898(A1) 申请公布日期 1995.09.28
申请号 DE19944409898 申请日期 1994.03.23
申请人 GOTTZEIN, RONALD, DIPL.-PHYS., 38126 BRAUNSCHWEIG, DE 发明人 GOTTZEIN, RONALD, DIPL.-PHYS., 38126 BRAUNSCHWEIG, DE;PAUMBSHAUSEN, BERND KOENIG VON, DIPL.-ING., 38108 BRAUNSCHWEIG, DE
分类号 C23C14/34;H01J37/34;(IPC1-7):C23C14/34 主分类号 C23C14/34
代理机构 代理人
主权项
地址