Additional plasma cathode sputtering method for production of thin films
摘要
The additional plasma cathode sputtering method for production of thin films is characterised by the following facts: (a) the deposit is produced by the plasma of one or several cathodes; (b) at the same time, an additional plasma is produced at or in front of each substrate in such a way that, independently of the deposition rate, energy-adjustable bombardment of each substrate with particles is possible.
申请公布号
DE4409898(A1)
申请公布日期
1995.09.28
申请号
DE19944409898
申请日期
1994.03.23
申请人
GOTTZEIN, RONALD, DIPL.-PHYS., 38126 BRAUNSCHWEIG, DE