JOSEPHSON JUNCTION FIELD EFFECT TRANSISTOR AND ITS MAKING METHOD

摘要

The device consists of a semi-insulating semiconductor substrate, a buffer layer which is undoped by impurities that exist on some top parts of the semiconductor substrate, a spacer layer in which 2 dimensional electron gas is formed, a carrier source layer which is doped by impurities that is formed on the top part of the spacer layer, a cap layer which is formed on the top part of the carrier source layer, a gate electrode which is formed on the top part of the cap layer, and a source and a drain electrodes which are formed to be contacted with the 2 dimensional electron gas.