| 摘要 |
A phase shift mask has a phase shift layer 13 with an inclined edge portion disposed above the boundary between the light transmitting support 11 and the light shielding pattern 12. The mask is made by applying a photoresist layer over the layer 13 and forming a pattem 15 etching the phase shift layer 13 so that inclined edge 14 is formed and then removing the resist pattern 15. The phase shift layer may be implanted with phosphorus ions to obtain a more gentle incline (Fig. 6B). <IMAGE> |
