发明名称 |
Semiconductor diode laser and method of manufacturing same. |
摘要 |
<p>Semiconductor diode lasers are used inter alia in optical disc systems, laser printers, bar code readers, and glass fibre communication systems. Lasers having a so-called (weakly) index-guided structure are very suitable for many applications inter alia because they can be manufactured comparatively simply and reliably. A disadvantage of the known (weakly) index-guided laser is that the so-called P-I (= optical power-current) characteristic thereof exhibits a kink. Such a kink limits the use of the laser to a relatively low optical power. According to the invention, such a (weakly) index-guided laser has a resonance cavity with a length for which the optical power at which a kink occurs in the P-I characteristic is a maximum. It was a surprise to find that the occurrence of a kink in the P-I curve of such a (weakly) index-guided laser depends on the length of the resonance cavity. Very surprising is the appearance of a maximum value in this kink power as a function of the length of the resonance cavity. Equally surprising is the occurrence of a series of such maxima, which are substantially equally high, and which are formed by the crests of a sawtooth curve with a very steep flank at the rising edge to each maximum. As a result, the laser length may be optimized not only in relation to the occurrence of kinks in the P-I characteristic but also in relation to other properties. The invention also relates to a method of manufacturing a laser according to the invention, which preferably comprises a ridge waveguide structure. <IMAGE></p> |
申请公布号 |
EP0674373(A2) |
申请公布日期 |
1995.09.27 |
申请号 |
EP19950200575 |
申请日期 |
1995.03.09 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
VAN DER POEL, CAROLUS JOHANNES;ACKET, GERARD ADRIAAN;SCHEMMANN, MARCEL FRANZ CHRISTIAN |
分类号 |
H01S5/10;H01S5/20;H01S5/22;H01S5/223;(IPC1-7):H01S3/19;H01S3/085 |
主分类号 |
H01S5/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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