PLASMA VAPOUR-DEPOSITION APPARATUS

摘要

The present invention provides a plasma vapor deposition apparatus and inline apparatus thereof which comprise, for the purpose of permitting formation of a high-quality film of ITO, for example, at a high productivity, a drive and a horizontally rotating circular holding plate connected thereto, the circular holding plate having a vapor source material mounting section concentric with the rotation axis thereof provided on the surface thereof, and a high-frequency exciting means having coil-shaped electrodes.