| 发明名称 |
II-VI Group compound semiconductor device and method for manufacturing the same. |
| 摘要 |
<p>A II-VI group compound semiconductor device comprising a ZnXMg1-XSYSe1-Y (0</=X</=1, 0</=Y</=1) semiconductor layer (8), an intermediate layer (13, 16) comprising a compound of an element constituting the semiconductor layer and an additive element of Cd, Te or Hg formed on the semiconductor layer, and an electrode layer (14, 17) containing Ni, Pt or Pd formed on the intermediate layer. <IMAGE></p> |
| 申请公布号 |
EP0674347(A1) |
申请公布日期 |
1995.09.27 |
| 申请号 |
EP19950301998 |
申请日期 |
1995.03.24 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
MURAKAMI, MASANORI;KOIDE, YASUO, FUKAKUSAGODOSHUKUSHA 423;TERAGUCHI, NOBUAKI;TOMOMURA, YOSHITAKA |
| 分类号 |
H01L21/28;H01L21/363;H01L21/40;H01L21/44;H01L21/443;H01L29/221;H01L29/45;H01L29/47;H01L33/28;H01L33/40;H01S5/00;(IPC1-7):H01L33/00 |
主分类号 |
H01L21/28 |
| 代理机构 |
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| 地址 |
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