Plasma processing method and apparatus.

摘要

The invention relates generally to plasma processing apparatus and more particularly to a plasma processing apparatus fit for use in subjecting a specimen such as a semiconductor element substrate to etching, filming and the like by means of a microwave plasma. In an embodiment of the invention a space is foreseen between slot antennas (7) for radiating microwaves and a dielectric microwave penetrating window (2) which forms part of a processing chamber (1) and is used for introducing the microwaves into the processing chamber in a plasma processing apparatus using microwaves. <IMAGE>