METHOD OF ETCHING MULTI LEVEL RESIST

摘要

(i)forming a lower resist film (2) on a semiconductor substrate (1): (ii)forming an intermediate layer (3) on the lower resist film(2); (iii)forming an upper resist film(9); (iv)patterning the irradiated the upper resist film using a patterning mask; (v)etching the intermediate layer(3) and the lower resist film(2) using the pattern of upper resist film(9) as etching mask in the named sequence to form an multi level resist pattern; and (vi) removing the pattern of upper resist film(9). The multi level resist pattern is produced by high accuracy.