| 发明名称 |
MOSFET AND ITS MAKING METHOD |
| 摘要 |
The method consists of a well region which is formed in the substrate, a source region which is formed in each well region, a bulk which is formed in the source region, a drain region which is formed in the bulk, and a oxidation layer and a gate which are formed in the trench region perpendicular to the source region, the bulk, and the drain region.
|
| 申请公布号 |
KR950011022(B1) |
申请公布日期 |
1995.09.27 |
| 申请号 |
KR19920014436 |
申请日期 |
1992.08.11 |
| 申请人 |
LG SEMICONDUCTOR CO., LTD. |
发明人 |
CHONG, WON - YONG;SHIN, DONG - JIN;LEE, JUN - SONG |
| 分类号 |
H01L21/336;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/336 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
