| 摘要 |
<p>The invention relates to plasma control. A method for plasma processing of a material consists in providing for a system of more than two meeting plasma jets (23) forming a mixing zone (24), feeding the material to be processed into the mixing zone (24), passing direct electric currents through the sections of the plasma jets (23) up to the mixing zone (24) and applying a magnetic field to the current-conducting sections of each plasma jet (23). A device for plasma processing of a material comprises a charge conduit (1), electric arc plasma jet generators, each consisting of electrode units (6) for generation of plasma jets (23), whose axes (11) are oriented at an acute angle * small Greek gamma * to the axis (2) of the charge conduit (1) and which are connected to a direct current source (21), and a magnetic system consisting of an open magnetic circuit with the poles (26) located in the mixing zone (24) of the plasma jets (23).</p> |
