| 摘要 |
The method consists of a step of forming a gate oxidation layer on a substrate, a step of forming the gate of selected transistor region, a step of forming an oxidation layer on the substrate, forming a photoresist layer on the oxidation layer, and forming N+ region on the surface of the substrate sequentially, a step of forming a side wall in the gate by removing the gate oxidation layer, a step of forming N- region to surround the N+ region, a step of forming a floating gate oxidation layer with a tunnel oxidation layer in the area overlapping with the N+ region, and a step of forming a floating gate on the floating gate oxidation layer, an interlevel oxidation layer on the floating gate, and a control gate on the interlevel oxidation layer.
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