| 摘要 |
PURPOSE:To realize a window-structure high-output semiconductor laser in which no absorption is generated in a window region and whose reliability is high. CONSTITUTION:An n-clad layer 2, a GaInP active layer 3 having a spontaneous superlattice structure, a p-clad layer 4, an etching-stopper layer 5 and a cap layer 11 are formed on a GaAs substrate 1 by an MOVPE method. Then, an SiO2 film 12 and a photoresist 13 are formed on the cap layer 11, a stripe-shaped opening part 14 is formed partially and N ions or B ions are implanted from the surface by making use of the SiO2 film 12 and the photoresist 13 as a mask. Then, the mask and the cap layer are removed, and a clad layer 6 is then grown. The growth of the clad layer can be used also as an annealing operation after the ions have been implanted. By the annealing operation, the spontaneous superlattice of an active layer in an ion-implanted part is disordered, a bad gap is expanded, and a window region is formed. |
