Five transistor memory cell with shared power line

摘要

Static random access memory cells (SRAMS) containing five MOS transistors are configured in a memory array such that only three bitlines are required for two cells. A first bitline is coupled to a first side of a first memory cell, and a second bitline is coupled to a first side of the second memory cell. The first and second memory cells share either a common power bitline or a common ground bitline. A control circuit executes a special write operation to write a low logic level on the second side of the memory cells. The control circuit is coupled to the first, second, and third bitlines to generate a first differential voltage across the memory cells that is lower than the operating voltage on the third bitline and to generate a second voltage lower than the operating voltage on the second bitline when storing a low logic level on the second side of the first storage cell. To perform a special write operation on the second storage cell, the control circuit generates the first differential voltage on the third bitline and the second voltage on the first bitline.