发明名称 |
Method of making light emitting diode bars and arrays |
摘要 |
Light emitting diodes (LEDs) and LED bars and LED arrays formed of semiconductive material, such as III-V, and particularly AlGaAs/GaAs material, are formed in very thin structures using organometallic vapor deposition (OMCVD). Semiconductor p-n junctions are formed as deposited using carbon as the p-type impurity dopant. Various lift-off methods are described which permit back side processing when the growth substrate is removed and also enable device registration for LED bars and arrays to be maintained.
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申请公布号 |
US5453405(A) |
申请公布日期 |
1995.09.26 |
申请号 |
US19930165025 |
申请日期 |
1993.12.09 |
申请人 |
KOPIN CORPORATION |
发明人 |
FAN, JOHN C. C.;DINGLE, BRENDA;SHASTRY, SHAMBHU;SPITZER, MARK B.;MCCLELLAND, ROBERT W. |
分类号 |
A61B3/113;G02B5/30;G02B27/00;G02B27/01;G02F1/1333;G02F1/1362;G09G3/32;G09G3/36;H01L21/77;H01L21/822;H01L21/84;H01L21/98;H01L25/065;H01L25/075;H01L27/06;H01L27/12;H01L27/15;H01L33/00;H01L33/10;H01L33/40;H01L33/46;H01S5/02;H01S5/42;H04N5/74;H05B33/12;(IPC1-7):H01L21/465 |
主分类号 |
A61B3/113 |
代理机构 |
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地址 |
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