发明名称 |
Sub-micron diffusion area isolation with SI-SEG for a DRAM array |
摘要 |
The present invention is a process for forming diffusion areas and field isolation regions on a silicon substrate, by the steps of: growing a field oxide layer on the surface of the substrate; forming a mask pattern which exposes a plurality of spaced-apart regions on the surface of the field oxide layer; removing portions of the field oxide layer in the exposed, spaced-apart regions with an anisotropic etch so as to leave a cavity in each spaced-apart region, each cavity having as its floor an exposed region of the silicon substrate, and having vertical walls of field oxide; angularly chamfering the rim of each cavity with a facet etch; and filling each cavity with silicon using selective epitaxial growth, and using the floor of each cavity as the seed crystal for such growth.
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申请公布号 |
US5453396(A) |
申请公布日期 |
1995.09.26 |
申请号 |
US19940250897 |
申请日期 |
1994.05.31 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
GONZALEZ, FERNANDO;FOX, III, ANGUS C. |
分类号 |
H01L21/762;H01L21/8242;H01L27/108;(IPC1-7):H01L21/76;H01L21/336 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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