| 摘要 |
PURPOSE:To prevent leakage and also, enlarge the capacitance of a capacitor by putting a lower electrode in such structure that it has a flat part and a sidewall with a specified height, and covering this lower electrode with a crystalline dielectric film and an amorphous dielectric film. CONSTITUTION:This semiconductor storage device is equipped with a plane part and a sidewall part with a specified height. Moreover, this is equipped with a crystalline dielectric film 11 being made on at least either the sidewall part or flat part of this lower electrode 10, and an amorphous dielectric film 12 being made at the corner at least of the lower electrode 10. Furthermore, this is equipped with an upper electrode 13 being made on the crystalline dielectric film 11 and the amorphous dielectric film 12. By making this device this way, the capacitance of the capacitor can be enlarged. Moreover, since the amorphous dielectric film 12 is made at the section where the crystalline disorder is easy to occur of this crystalline dielectric film 11, leakage currents decrease, and the reliability on the semiconductor storage device can be improved. |
