| 摘要 |
PURPOSE:To realize a high luminance short wavelength semiconductor light emitting element by growing a high quality AlGaInN based thin film with high reproducibility on a saphire substrate. CONSTITUTION:The semiconductor light emitting element comprises a plurality of semiconductor layers of AlGaInN based material laminated through buffer layers on a saphire substrate 10 wherein the buffer layer comprises a first porous AlN butter layer 11 for polarity control and nucleus formation formed sparcely (granularly) by 10nm or less on the surface of the substrate 10, and a second InN buffer layer 12 for relaxing thermal stress formed thicker than the first buffer layer 11. |
