| 发明名称 |
Process for preparing semiconductor substrate by bringing first and second substrates in contact |
| 摘要 |
A process for preparing a semiconductor substrate comprises bringing a first substrate provided with at least one of boron and phosphorus on the surface of an insulating layer formed on the surface of the substrate in contact with a second substrate, and integrating both of the substrates by a heat treatment.
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| 申请公布号 |
US5453394(A) |
申请公布日期 |
1995.09.26 |
| 申请号 |
US19930010296 |
申请日期 |
1993.01.28 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
YONEHARA, TAKAO;YAMAGATA, KENJI |
| 分类号 |
H01L21/02;H01L21/304;H01L21/306;H01L21/762;H01L27/12;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/02 |
| 代理机构 |
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