发明名称 POLYIMIDE-BASED PRECURSOR COMPOSITION, ITS PRODUCTION AND SEMICONDUCTOR DEVICE AND OPTICAL APPARATUS USING THE SAME
摘要 PURPOSE:To obtain the subject composition, containing an organozirconium compound in a polyimide-based precursor, excellent not only in heat and solvent resistances but also in adhesion to a substrate and suitable as an insulating film for semiconductor devices, a protective film, a material, etc., for optical transmission lines. CONSTITUTION:This precursor composition contains (B) an organozirconium compound such as tributoxyacetylacetonatozirconium in (A) a polyimide-based precursor, e.g. a polyimide-based precursor, obtained by reacting a tetracarboxylic dianhydride, e.g. (trifluoromethyl)pyromellitic dianhydride with a diamine such as 4,4'-diaminodiphenyl ether in a polar solvent and having 1-30 imidation ratio. Furthermore, the content of the component (B) is preferably 0.005-5wt.% based on the component (A).
申请公布号 JPH07247425(A) 申请公布日期 1995.09.26
申请号 JP19940039644 申请日期 1994.03.10
申请人 HITACHI CHEM CO LTD 发明人 YAMAGISHI TOMOAKI;SASAKI HAN
分类号 C08K5/56;C08L79/04;C08L79/08;G02B6/12;H01L21/312;(IPC1-7):C08L79/04 主分类号 C08K5/56
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