发明名称 PHASE SHIFT MASK AND MANUFACTURE THEREOF
摘要 PURPOSE:To manufacture a half-tone phase shift mask arranged with auxiliary patterns for reducing sub-peaks, solving the problem of the suppression of the phase shift effect caused by the auxiliary patterns, dissolving troublesome sub- peaks, and having a good phase shift mask effect. CONSTITUTION:This phase shift mask is provided with a light transmission section 1 and a half-shading section 2, and the light transmission section 1 and the half-shading section 2 transmit light in phases different from each other. Auxiliary patterns 31-34 reducing sub-peaks are arranged around one of the light transmission section 1 and the half-shading section 2 providing a main pattern. The positions of the auxiliary patterns 31-34 are calculated and designed to reduce sub-peaks without suppressing the phase shift effect. The auxiliary patterns 31-34 are arranged on the side further apart from the occurrence positions of sub-peaks than the main pattern.
申请公布号 JPH07248606(A) 申请公布日期 1995.09.26
申请号 JP19940039545 申请日期 1994.03.10
申请人 SONY CORP 发明人 UESAWA FUMIKATSU
分类号 G03F1/29;G03F1/32;G03F1/36;G03F1/68;H01L21/027 主分类号 G03F1/29
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