Quantum interference device and complementary logic circuit utilizing thereof

摘要

A quantum interference device has semiconductor heterojunctions laminated on a semiconductor substrate for forming a two-dimensional electron gas channel. On the semiconductor heterojunctions are formed a first, a second and a third electrode which, upon the application of a negative voltage, form a depletion region within the semiconductor heterojunctions, thereby making the resulting two-dimensional electron gas channel a quantum wire of a stub structure comprising an entrance and an exit for electron waves, and a stub formed between the entrance and the exit. The second and third electrodes each have a first side substantially parallel to a side of the first electrode. The second and third electrodes also have a second side parallel to each other's second side. On a site near the edge of said stub is provided a fourth electrode for defining the effective length of the stub by a voltage applied thereto.