| 摘要 |
PURPOSE:To provide the structure of a favorable and stable capacitor lower electrode in a bit line shield type of DRAM, and its manufacture. CONSTITUTION:A first sidewall 24a is made at the sidewall of a silicon oxide film 23, and with this as a mask, a mask 22 for forming a contact hole 16 is made, and using this mask 22, a contact hole 16 is made in an insulating film 14, and a second polycrystalline film 17 is made all over the surface including the interior of the contact hole 16, and after etching of the second polycrystalline silicon film 17, a second sidewall 25a consisting of a conductive film is made on the sidewall. Accordingly, at the time of formation of a capacitor, the process margin can be enlarged, and the capacitance of the capacitor can be increased. |
